深圳市兆瑞芯科技有限公司
会员年限
5年
深圳市兆瑞芯科技有限公司
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OC5265B ，OC5864 ，GR8853AJG ，OC5822 ，GR8874KG ，VS4620GEMC ，MBI6662GD ，MBI6658GD ，GR8830CG ，KP3310SGA
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存储IC NCE6080K
型号
:
NCE6080K
品牌
:
NCE新洁能
封装
:
TO-252
批号
:
21+
标准包装
:
2500/盘
| 数量 | 单价 |
|---|---|
| 5+ | ￥1 |
| 100+ | ￥0.9 |
| 1000+ | ￥0.8 |
购买数量
：
x ￥1 = ￥5
库存
：
8879213
预计发货日： 2025/03/31
规格参数
数据手册 PDF
商品详情
规格参数
| Drain-Source Voltage | 20 |
| Gate-Source Voltage | ±20 |
| Drain Current-Continuous | 80 |
| Drain Current-Continuous(TC=100℃) | 56.5 |
| Pulsed Drain Current | 320 |
| Maximum Power Dissipation | 110 |
| Derating factor | 0.73 |
| Single pulse avalanche energy (Note 5) | 390 |
| Operating Junction and Storage Temperatu | -55 To 175 |
| Application | PWM |
| Application | Load Switching |
数据手册 PDF
商品详情
深圳市兆瑞芯电子有限公司多年专注于为广大的LED电源厂家和照明工厂提供配套的产品和方案。代理和经销的产品皆为进口全新原装、具有高性价比优势，且提供相应的产品技术支持。深圳市兆瑞芯电子有限公司实力雄厚，重信用、守合同、保证所供产品质量原装，以多品种经营特色和薄利多销的原则，服务于新老客户并且赢得了广大客户的信任。 我们郑重承诺只做原装
Description
The NCE6080K uses advanced trench technology and
design to provide excellent RDS(ON) with low gate charge. It
can be used in a wide variety of applications.
General Features
● VDS =60V,ID =80A
RDS(ON) <8.5mΩ @ VGS=10V
● High density cell design for ultra low Rdson
● Fully characterized avalanche voltage and current
● Good stability and uniformity with high EAS
● Excellent package for good heat dissipation
Application
● PWM
● Load Switching
Off Characteristics
Drain-Source Breakdown Voltage BVDSS VGS=0V ID=250μA 60 - - V
Zero Gate Voltage Drain Current IDSS VDS=60V,VGS=0V - - 1
μA
Gate-Body Leakage Current IGSS VGS=±20V,VDS=0V - - ±100 nA
On Characteristics (Note 3)
Gate Threshold Voltage VGS(th) VDS=VGS,ID=250μA 2 2.8 4 V
Drain-Source On-State Resistance RDS(ON) VGS=10V, ID=20A - 7 8.5 mΩ
Forward Transconductance gFS VDS=5V,ID=20A 20 - - S
Dynamic Characteristics (Note4)
Input Capacitance Clss - 4000 - PF
Output Capacitance Coss - 290 - PF
Reverse Transfer Capacitance Crss
VDS=30V,VGS=0V,
F=1.0MHz
- 210 - PF
Switching Characteristics (Note 4)
Turn-on Delay Time td(on) - 8.5 - nS
Turn-on Rise Time tr - 7 - nS
Turn-Off Delay Time td(off) - 40 - nS
Turn-Off Fall Time tf
VDD=30V,RL=1Ω
VGS=10V,RG=3Ω
- 15 - nS
Total Gate Charge Qg - 90 nC
Gate-Source Charge Qgs - 9 nC
Gate-Drain Charge Qgd
VDS=30V,ID=20A,
VGS=10V
- 18 nC
Drain-Source Diode Characteristics
Diode Forward Voltage (Note 3) VSD VGS=0V,IS=20A - 1.2 V
Diode Forward Current (Note 2) IS - - 80 A
Reverse Recovery Time
trr - 32 - nS
Reverse Recovery Charge
Qrr
TJ = 25°C, IF = 20A
di/dt = 100A/μs(Note3)
- 45 - nC
