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数量 | 单价 |
---|---|
5+ | ¥13.91 |
规格参数
数据手册 PDF
商品详情
型号 | NCE4614 |
通道 | -40V P沟道 |
电压 | -40V |
封装 | SOP-8 |
应用 | 充电器 |
温度 | -55 To 150 ℃ |
VDS | -40V |
VGS | 4.5V |
ID | -7A |
RDS | 29mΩ |
新洁能推出的低压MOS: -40V P沟道,小封装MOS, NCE4614 实际电压可以达到 -40V ,可以满足 LED电源,充电器,小家电等需要高压,大电流,小封装的要求, NCE4614 产品质量稳定,广泛运用于 LED电源,充电器,小家电,游戏机,电源,混色LED灯等电子产品
NCE4614原装现货,NCE4614优势热销
NCE4614泛运用于电源,控制板,计算机,家电,通讯设备等产品上,欢迎来电咨询
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Description The NCE4614 uses advanced trench technology to provide excellent RDS(ON) and low gate charge . The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications. General Features ● N-Channel VDS =40V,ID =8A RDS(ON) < 19mΩ @ VGS=10V RDS(ON) < 29mΩ @ VGS=4.5V ● P-Channel VDS =-40V,ID = -7A RDS(ON) <35mΩ @ VGS=-10V RDS(ON) < 45mΩ @ VGS=-4.5V ● High power and current handing capability ● Lead free product is acquired ● Surface mount package Schematic diagram Marking and pin assignment SOP-8 top view Package Marking and Ordering Information Device Marking Device Device Package Reel Size Tape width Quantity NCE4614 NCE4614 SOP-8 Ø330mm 12mm 2500 units Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol N-Channel P-Channel Unit Drain-Source Voltage VDS 40 -40 V Gate-Source Voltage VGS ±20 ±20 V TA=25℃ 8 -7 Continuous Drain Current TA=70℃ ID 6 -5.5 A Pulsed Drain Current (Note 1) IDM 40 -30 A Maximum Power Dissipation TA=25℃ PD 2.0 2.0 W Operating Junction and Storage Temperature Range TJ,TSTG -55 To 150 -55 To 150 ℃
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公司长期备有新洁能全线产品。保证原厂原装现货库存,NCE4614量大单价优势出 , NCE3400 NCE6005AR NCE4614 NCE6080K NCE3095K NCE70T540F NCE3050K VS3622DE VS3508AE VSP008N10MSC 等
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